By Gabriel Vasilescu

ISBN-10: 3540265104

ISBN-13: 9783540265108

ISBN-10: 3540407413

ISBN-13: 9783540407416

"Electronic Noise and Interfering signs" is a complete reference publication on noise and interference in digital circuits, with specific concentrate on low-noise layout. the 1st a part of the ebook offers with mechanisms, modeling, and computation of intrinsic noise that is generated in each digital machine. the second one half analyzes the coupling mechanisms which may end up in a infection of circuits by means of parasitic indications and gives applicable ideas to this challenge. The final half comprises greater than a hundred functional, problematic case reviews. The ebook calls for no complicated mathematical education because it introduces the basic equipment. furthermore, it presents perception into computational noise research with SPICE and NOF, a software program constructed by way of the writer. The publication addresses designers of digital circuits in addition to researchers from electric engineering, physics, and fabric technological know-how. it may be of curiosity additionally for undergraduate and graduate students.

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**Example text**

Model. Becking was the ﬁrst to model diﬀusion noise, followed by Van der Ziel. They considered an n-type semiconductor with an electron density gradient; the proposed approach [34] consists in partitioning the volume of semiconductor into elementary rectangular boxes (∆x ∆y ∆z). Due to collisions, electrons are able to pass from one box to an adjacent box, this being considered a series of independent events. 14) where q is the elementary charge, n(x) the electron concentration on the x axis, Dn the diﬀusion constant, and ∆x, ∆y, ∆z are the dimensions of the elementary box.

Van der Ziel has established that for a MOSFET device the surface-state density at the Fermi level is the only parameter that inﬂuences 1/f noise. Hence, the only way to reduce ﬂicker noise signiﬁcantly is to lower the surfacestate density in the vicinity of the Fermi level. He has shown that 1/f noise increases with decreasing temperature, since the density of surface states increases toward the conduction band. For MOS transistors operating in strong inversion, ﬂicker noise does not depend on the gate bias, because the surface potential varies very slowly with gate charge.

A Spontaneous clustering of free electrons at one end, b Thermal noise voltage versus time Origin. The physical origin of this noise is the thermal motion of free electrons inside a piece of conductive material, which is totally random. Explanation. 1a shows a piece of conductive material where some free electrons are indicated. Random thermal motion of electrons inside the material leads to temporary agglomeration of carriers at one end or the other. From a macroscopic standpoint, this means that the potential of end contact B will be more negative than the potential of end contact A.

### Electronic Noise and Interfering Signals: Principles and Applications by Gabriel Vasilescu

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